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Field Effect Transistor with Memory Function Disclosure Number: IPCOM000069437D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

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Esaki, L Sakaki, H [+details]


A memory capability can be imparted to a Schottky barrier field-effect transistor by adding a potential well in the depletion region of the device. (Image Omitted)