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Field Effect Transistor with Memory Function

IP.com Disclosure Number: IPCOM000069437D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Esaki, L Sakaki, H [+details]

Abstract

A memory capability can be imparted to a Schottky barrier field-effect transistor by adding a potential well in the depletion region of the device. (Image Omitted)