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SLM Process for Making Magnetic Bubble Memory

IP.com Disclosure Number: IPCOM000069458D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Acosta, RE Blakeslee, MC Romankiw, LT Tao, LJ [+details]

Abstract

Processes for fabricating magnetic bubble memory structures require the formation of two levels of metallurgy. One level is a current-carrying conductor level, while the other level is a magnetic material having in-plane magnetization. The magnetic level is used to provide the propagation elements in bubble devices and, also, for detection of the bubbles. In order to avoid the problems inherent in the alignment of very small pattern masks, on the order of 1 micron linewidths, single level metallurgy SLM) using only a single mask alignment has been developed. Further, for bubble domain transfer switches controlled by current-carrying conductors, it is important to have the conductor close to the magnetic medium in order to improve the operational margins of these switches.