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High Power Narrow Bandwidth Pulsed Semiconductor Laser

IP.com Disclosure Number: IPCOM000069467D
Original Publication Date: 1978-Apr-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Zory, PS [+details]

Abstract

Output power saturation effects in long semiconductor lasers with internal dissipative type losses may be avoided by extracting the output beam from the entire plane of the active layer using grating coupling techniques.