Browse Prior Art Database

Enhanced Storage Medium for a Memory Cell

IP.com Disclosure Number: IPCOM000069507D
Original Publication Date: 1978-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Bhattacharyya, A Landler, P [+details]

Abstract

The storage capacitor Cs for the memory cell described in U. S. Patent 3,979,734, which utilizes the capacitor Cs coupled to only one bipolar transistor, has storage plate areas independent of emitter geometry.