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Enhanced Storage Medium for a Memory Cell Disclosure Number: IPCOM000069507D
Original Publication Date: 1978-May-01
Included in the Prior Art Database: 2005-Feb-20

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Bhattacharyya, A Landler, P [+details]


The storage capacitor Cs for the memory cell described in U. S. Patent 3,979,734, which utilizes the capacitor Cs coupled to only one bipolar transistor, has storage plate areas independent of emitter geometry.