Recessed Silicon Dioxide Defined Integrated Circuits with Minimal "Bird's Beak" and Dislocations in Silicon
Original Publication Date: 1978-May-01
Included in the Prior Art Database: 2005-Feb-20
It has been recognized in the art that when forming recessed silicon dioxide isolation for lateral isolation of integrated circuitry, the "bird's beak" would occur when a silicon dioxide-silicon nitride layer is used to define the recessed silicon dioxide during the thermal oxidation of the substrate to form the same. On the other hand, when a silicon nitride layer is in direct contact with the silicon substrate, as shown in Figs. 1A and 1B, in such a directly applied silicon nitride layer, it is used to define the recessed silicon dioxide to be subsequently formed by thermal oxidation, then dislocations tend to occur in the silicon substrate.