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Clean Melt Surfaces in Multilayer LPE Growth

IP.com Disclosure Number: IPCOM000069608D
Original Publication Date: 1978-May-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Scheel, HJ [+details]

Abstract

A liquid phase epitaxial (LPE) fabrication technique for multilayer devices utilizes a cylindrical graphite multichamber apparatus as crucible. rotating Archimedian screw with virtually horizontal axis transports separate liquid quanta between successive threads. Substrates onto which alternating semiconductor layers have to be grown are fastened to the outer wall inside the cylinder. During rotation, such substrates are successively immersed in liquids of dissolved or molten material.