Browse Prior Art Database

Ultra Small Nanostructure Tunnel Junctions Utilizing Surface Migrating Resist Lithography

IP.com Disclosure Number: IPCOM000069630D
Original Publication Date: 1978-May-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Broers, AN Cuomo, JJ Laibowitz, RB Molzen, WW [+details]

Abstract

With the use of surface migrating resist lithography which involves electron-beam conversion of resist that builds by surface migration, lines, line-like structures and gaps as small as 50 Angstroms in width can be made. Smaller line widths (to approximately 25 Angstroms) are also possible. Tunnel junction devices (including Josephson junctions) which utilize this technique are also possible.