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Optimized Microstructures Utilizing Surface Migrating Resist Lithography

IP.com Disclosure Number: IPCOM000069631D
Original Publication Date: 1978-May-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Broers, AN Cuomo, JJ Laibowitz, RB Molzen, WW [+details]

Abstract

Surface migrating resist lithography which involves electron-beam conversion of a resist that builds by surface migration is useful for fabricating thin-film structures and devices with line widths (sizes) as small as 25 angstroms. However, the properties of the structures and devices will depend in unique ways on the structure of the film used. The structure or phase of such films can be amorphous, polycrystalline or single crystal. Using commonly practiced techniques, most films are polycrystalline with grain sizes ranging from ten to several thousand angstroms.