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Method for Growing Large Grained Polycrystalline GaAs Films for Solar Cells

IP.com Disclosure Number: IPCOM000069636D
Original Publication Date: 1978-May-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Blakeslee, AE Vernon, SM [+details]

Abstract

The grain size of polycrystalline GaAs films grown by the reaction AsH(3) + Ga(CH(3))(3) > GaAs + 3CH(4). can be improved by precoating the metal substrate with a film of liquid gallium.