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The grain size of polycrystalline GaAs films grown by the reaction AsH(3) + Ga(CH(3))(3) > GaAs + 3CH(4). can be improved by precoating the metal substrate with a film of liquid gallium.
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Method for Growing Large Grained Polycrystalline GaAs Films for Solar
The grain size of polycrystalline GaAs films grown by the reaction AsH(3) +
Ga(CH(3))(3) > GaAs + 3CH(4). can be improved by precoating the metal
substrate with a film of liquid gallium.
The gallium may be applied by pyrolizing Ga(CH(3))(3) at 700 degrees C.
Then a flow of 5 cc/min of arsine is reacted with the Ga film for 15 minutes. The
growth of the polycrystalline GaAs film is done at 850 degrees C for 15 minutes
in the presence of 3 cc/min arsine and 1 cc/min Ga(CH(3))(3). Ta and Mo are