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Inversion Charge Transistor

IP.com Disclosure Number: IPCOM000069693D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Lee, HS [+details]

Abstract

In view of the short channel lengths presently found in many field-effect transistors, the threshold voltage Vth is now a function of the channel length. The shorter the nominal channel length the greater the chance of variation in the voltage threshold. The general goal in controlling the short channel effect is to prevent the spread of electric field lines from the drain to the source electrodes of the transistor, which requires a very shallow junction depth. By employing the illustrated transistor structure, the threshold voltage becomes relatively insensitive to process variations.