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Forming High and Low Barrier Height Schottky Barrier Diodes and Ohmic Contacts with no PtSi

IP.com Disclosure Number: IPCOM000069724D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Gniewek, JJ Reith, TM Sullivan, MJ White, JF [+details]

Abstract

A process is described for achieving high and low Schottky barrier diodes and ohmic contacts on the same semiconductor substrate. A single metallurgy is used for all contacts. The metallurgy may be, for example, Ti-W or Ta-Cr.