Forming High and Low Barrier Height Schottky Barrier Diodes and Ohmic Contacts with no PtSi
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21
A process is described for achieving high and low Schottky barrier diodes and ohmic contacts on the same semiconductor substrate. A single metallurgy is used for all contacts. The metallurgy may be, for example, Ti-W or Ta-Cr.