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Layout for Bipolar Random Access Memory Cell

IP.com Disclosure Number: IPCOM000069740D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Eardly, DB [+details]

Abstract

The physical size of a bipolar random-access memory cell can be significantly reduced by an interchange of the locations of the transistor base and collector contacts. The interchange permits straight across metal wiring to achieve the crossover indicated in the Fig. 1 circuit diagram. The polycrystalline silicon base contact permits this interchange of base and collector contacts, as shown in Fig. 2.