Browse Prior Art Database

E Beam Resist Image Profile Control

IP.com Disclosure Number: IPCOM000069746D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Lounsbury, JB [+details]

Abstract

Because of electron scattering in resist and substrate, resist image profiles are different in developed electron (E)-beam exposed resist layers depending on adjacency to other images. An example of this is shown in Figs. 1A and 1B taken from SEM (scanning electron microscope) photos of images from a single wafer with ~ 1 Micron thick resist layer where, in Fig. 1A, an isolated 2 Micron line is shown and, in Fig. 1B, a series of co-adjacent 2 Micron lines are shown.