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Dynamic Bipolar Memory Cell Circuit Disclosure Number: IPCOM000069747D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

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Eardly, DB [+details]


A memory circuit is described wherein a P-channel insulated gate field-effect transistor (FET) is used to turn on and also to turn off a silicon controlled rectifier. Minority carrier storage in the silicon controlled rectifier is utilized to store data dynamically.