Browse Prior Art Database

High Speed, High Density Bipolar Random Access Memory

IP.com Disclosure Number: IPCOM000069750D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Ho, IT Riseman, J [+details]

Abstract

A memory cell shown in the Fig. 1 circuit has a high packing density and a bipolar level performance. The memory cell may operate in either a static mode or a dynamic mode.