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High Speed, High Density Bipolar Random Access Memory Disclosure Number: IPCOM000069750D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

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Ho, IT Riseman, J [+details]


A memory cell shown in the Fig. 1 circuit has a high packing density and a bipolar level performance. The memory cell may operate in either a static mode or a dynamic mode.