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Defining the Channel Thickness of a JFET by Out Diffusion of Boron Doped Region Embedded in Arsenic Doped Subcollector

IP.com Disclosure Number: IPCOM000069754D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Hornung, R Nuez, JP Tremintin, B [+details]

Abstract

It has been pointed out that arsenic species induced a retardation factor for boron species in diffusion steps. In the present process the N channel of a JFET (junction field-effect transistor) is accurately defined between a boron-doped buried region, formed simultaneously with the bottom isolation regions in an arsenic-doped subcollector, and an implanted bar.