Browse Prior Art Database

Emitter Structure for Power Transistors

IP.com Disclosure Number: IPCOM000069765D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Dahmen, M Delmer, H [+details]

Abstract

The parameters of a transistor are decisively influenced by the size of the active emitter area. This area should be as large as possible to keep the current density low. An emitter element can be regarded as active when its distance from the neighboring base contact does not exceed a specified critical length which is a function of the vertical structure, the current density and the current amplification.