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Storage Cell With Electrically Inhomogeneously "Doped" gate Dielectric

IP.com Disclosure Number: IPCOM000069766D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Folberth, OG [+details]

Abstract

Known one-transistor storage cells generally comprise two elements, namely a capacitor for storing the information and a MOSFET (metal oxide semiconductor field-effect transistor) for the transfer and faucet function. Recently, a new version of such a dynamic cell was described in the IEEE Transactions on Electron Devices ED-23, 126-131 (February 1976). This charge-coupled random-access memory cell combines the storage capacitor and transfer gate of the one-transistor cell in a single gate. In that case the channel region is partly altered in such a manner that two regions with different threshold voltages are obtained, one serving to store and the other to transfer the information.