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Method to Reduce Defects in Very Thin SIO(2) Films

IP.com Disclosure Number: IPCOM000069848D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Irene, EA [+details]

Abstract

The current trend in MOS technology is toward the use of very thin (<200 angstroms) SiO(2) films for gate dielectrics. The SiO(2) films which best serve this purpose are those grown by thermal oxidation of Si. However, very thin SiO(2), films usually display a larger defect density than similarly prepared thicker films. A process which enables the preparation of very thin (<200 angstroms) SiO(2) films with defect densities equal to or less than much thicker SiO(2) films and some five to ten times reduced from the defect density of conventionally grown <200 angstroms SiO(2) film (grown in dry O(2)) is defined. The defect densities gamma are obtained from a statistical treatment of voltage ramp dielectric breakdown measurements performed on suitable MOS structures.