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Method to Eliminate "Pinholes" in Polycrystalline Silicon

IP.com Disclosure Number: IPCOM000069849D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Irene, EA [+details]

Abstract

So-called pinholes in poly silicon (poly Si) are responsible for failure of the gate by permitting anomalous junctions to be formed when the poly Si is used as an ion implantation barrier, and an oxide thermally grown in a poly Si film with pinholes will also have holes and therefore cause device failure.