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Self Aligned Stack Gate IGFET Device Having an Underlying P N Junction for Charge Injection Disclosure Number: IPCOM000069854D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

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Ning, TH Osburn, CM [+details]


A self-aligned stacked gate FET device may be built with the capability to uniformly inject minority carriers into the floating gate by forming the device on a substrate with an underlying p-n junction.