Browse Prior Art Database

Self Aligned Stack Gate IGFET Device Having an Underlying P N Junction for Charge Injection

IP.com Disclosure Number: IPCOM000069854D
Original Publication Date: 1978-Jun-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Ning, TH Osburn, CM [+details]

Abstract

A self-aligned stacked gate FET device may be built with the capability to uniformly inject minority carriers into the floating gate by forming the device on a substrate with an underlying p-n junction.