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A self-aligned stacked gate FET device may be built with the capability to uniformly inject minority carriers into the floating gate by forming the device on a substrate with an underlying p-n junction.
English (United States)
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Self Aligned Stack Gate IGFET Device Having an Underlying P N Junction
for Charge Injection
A self-aligned stacked gate FET device may be built with the capability to
uniformly inject minority carriers into the floating gate by forming the device on a
substrate with an underlying p-n junction.
The structure is shown in the figure.
Charge storage in the floating gate makes the device function as an
electrically reprogrammable memory device. The minority carriers can be
injected into the floating gate by reverse biasing the p-n junctions formed at the
source and drain N/+/ regions and forward biasing the p-n junction of the
substrate p-type well.
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