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Transistor and Wiring with Multi Step First Layer Metal

IP.com Disclosure Number: IPCOM000069924D
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Chang, AW Pogge, HB [+details]

Abstract

A multi-step first layer metal wiring to a transistor with poly-silicon contacts the base and the metal directly contacts the emitter. It also uses the dielectric isolation to reduce isolation capacitance.