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Random Access Memory Disturb Test Circuit Disclosure Number: IPCOM000069931D
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21

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Palmer, R Perris, J Shen, MN [+details]


Initially, the word generator is programmed to write a specific word pattern into the random-access memory (write gate low). During this time the strobe line is low and the AND gates inhibit the output of the XORs from reaching the flip-flops (F/F).