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Complete Oxide Isolation of Semiconductor Epitaxial Layer

IP.com Disclosure Number: IPCOM000069934D
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Gaind, AK Goth, GR [+details]

Abstract

Autodoping by the subcollector isolation regions into the epitaxial region during the epitaxial deposition process results in excessive semiconductor substrate capacitance. This capacitance can be substantially reduced by completely isolating the epitaxial layer with recessed oxide isolation.