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Etch Stop for Reactive Ion Etching of Polysilicon Disclosure Number: IPCOM000069935D
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21

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Related People

Johnson, C Wilbarg, RR [+details]


An aluminum underlay is used as an etch stop during reactive ion etching (RIE) of polysilicon. This process eliminates the attack of underlying oxide or nitride caused by overetching in some areas due to nonuniformity of films.