Etch Stop for Reactive Ion Etching of Polysilicon
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21
An aluminum underlay is used as an etch stop during reactive ion etching (RIE) of polysilicon. This process eliminates the attack of underlying oxide or nitride caused by overetching in some areas due to nonuniformity of films.