Browse Prior Art Database

Etch Stop for Reactive Ion Etching of Polysilicon

IP.com Disclosure Number: IPCOM000069935D
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Johnson, C Wilbarg, RR [+details]

Abstract

An aluminum underlay is used as an etch stop during reactive ion etching (RIE) of polysilicon. This process eliminates the attack of underlying oxide or nitride caused by overetching in some areas due to nonuniformity of films.