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Anodic Dielectric Isolation

IP.com Disclosure Number: IPCOM000069956D
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Briska, M Schmitt, A Thiel, K [+details]

Abstract

Conventional integrated semiconductor structures with dielectric zones for isolating and defining separate circuit devices generally use recessed oxide, which is thermally grown in corresponding isolation grooves, in one surface of the semiconductor body. Thermal oxide growth requires, however, high temperatures leading, for example, to undesired shifts in the doping profile of the associated device zones and to substantial mechanical stress.