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To grow homogeneously composed, thin oxide layers, oxygen ions are implanted into the substrate.
English (United States)
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Method of Producing Very Thin Oxide Layers on Substrates
To grow homogeneously composed, thin oxide layers, oxygen ions are
implanted into the substrate.
The implanted oxygen ions supply the oxygen necessary for the oxidation of
the substrate and cause the erosion of the substrate surface. Provided that an
adequate ratio of implanted to ejected particles exists, an oxide layer of an
approximate thickness Rp with the oxygen concentration distribution shown in
the figure is obtained as a function of the ion energy. The method is suitable for
the production of 50 Angstroms thick oxide layers covering either the full surface
or selected areas. For example, an oxygen ion beam of 2 KeV and high fluency
produces a 25 Angstroms thick SiO(2) layer on an Si substrate within less than
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