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Phase Layer Boron Diffusion Process for Second Breakdown Free Power Switching Transistors Disclosure Number: IPCOM000069972D
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21

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Oleszek, GM Shepard, JF [+details]


The introduction of an avalanche diode having a breakdown voltage less than the second breakdown voltage of the intrinsic transistor to eliminate exposure to transistor reverse bias second breakdown is described in the IBM Technical Disclosure Bulletin 19, 1308-1309 (September 1976).