Power High Voltage/Low Voltage Integrated Circuit Structure
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21
A method is described to implement a fully integrated high voltage (to 1000 V), high current (to 15 A) driver circuit for use in power switching circuits. An isolation region is etched into a basic high voltage transistor structure to define a control circuit substrate region in which high density, low voltage control circuitry can be fabricated using short time/temperature cycles that do not affect the high voltage switch transistor junctions that had been formed by very long time/temperature processing cycles.