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CF(4)/NE Gas Mixtures for Plasma Etching

IP.com Disclosure Number: IPCOM000070031D
Original Publication Date: 1978-Jul-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Chapman, BN Corpuz, C Minkiewicz, VJ [+details]

Abstract

A plasma etching process includes the combination of an etching gas and a second gas which effects a Penning ionization of the etching gas. The second gas has to have a metastable excitation state of energy greater than the ionization potential of the etching gas. An example is the combination of CF(4) as the etching gas (14.94 eV) and neon (16.53 eV and 16.62 eV) as the second gas. Other second gases, such as helium, may be used. The advantages of this process are the control of the voltage-current characteristics of the discharge as well as the control of any physical sputtering associated therewith.