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The present process makes use of lift-off to completely remove background cermet material when defining cermet (CrSiO) resistors on a ceramic substrate.
English (United States)
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Cermet Definition Process
The present process makes use of lift-off to completely remove background
cermet material when defining cermet (CrSiO) resistors on a ceramic substrate.
In the process, the ceramic substrate a has deposited thereon a
lift-off metallic layer b of, for example, copper, and areas of the
copper are selectively removed where it is desired to retain cermet
and define the resistor. Next, a cermet film is deposited which
results in cermet c on top of the copper and cermet d on the
substrate where the copper was removed. In the metallized ceramic
process, where the substrate is nodular, the metallization of the
copper takes the form of columnar granules e mating the surface of
the cermet film c equivalent to the nodular surface of the substrate.
The cermet film c in turn has microvoids f due to the nodular
surface of the copper film b.
Subsequently, the substrate is immersed in an etchant, such as, FeCl(3), for
copper, to remove the copper layer b. It is critical for the process that the etchant
not react with the cermet. However, although the cermet is inert to the etchant,
the etchant penetrates the cermet film above the copper through the microvoids f
and dissolves the copper. In turn, this selectively removes the cermet film c over
the copper. The cermet film d in contact with the substrate remains to form the
required resistor geometries.
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