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Epi Isolation Diode Structure

IP.com Disclosure Number: IPCOM000070111D
Original Publication Date: 1978-Aug-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Blose, WL Martin, RD [+details]

Abstract

This epitaxial isolation (epi-isol) diode 1 has the inner side 7 of its anode P region 2 formed inwardly toward its cathode N+ region 3 and beyond isolation region 4. To minimize carrier injection into P substrate 5, it is not provided with a subcollector region 6 as is the case of conventional epi-isol diodes having conventionally formed sides 7', as shown by the dotted lines in the figure.