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Where thermal gradients in hot processing are minimized in semiconductor device manufacture, the films placed on the front and back wafer surfaces control the direction and magnitude of the elastic warpage.
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Elimination of Wafer Warpage in Large Diameter Silicon Wafers
Where thermal gradients in hot processing are minimized in semiconductor
device manufacture, the films placed on the front and back wafer surfaces control
the direction and magnitude of the elastic warpage.
Warpage due to elastic deformation of wafers during semiconductor
processing is eliminated by the following procedures.: 1. depositing or growing
identical films on both sides of the wafers; 2. depositing multiple dielectric films
on the same side of the wafer which have compensating internal stresses, i.e.,
SiO(2)/Si(3)N(4);, 3. where only one side of the wafer is available for film
deposition, by controlling the ratio of unetched film to substrate; 4. increasing the
wafer thickness in proportion to the increased wafer diameter.