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Realization of Large Value Capacitance Across Base and Collector Terminals of a Bipolar Transistor

IP.com Disclosure Number: IPCOM000070128D
Original Publication Date: 1978-Aug-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

Sometimes a need exists to increase the capacitance across the base and collector terminals of a bipolar transistor component of integrated circuits. The required increase may be anywhere in the typical range of 0.1-2 pf.