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The capacitor shown in Fig. 1, which presents a very high value per unit area, is used for reducing the rate effect sensitivity in a thyristor structure, as shown in Fig. 2.
English (United States)
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Composite Junction Capacitor for Reducing the Rate Effect Sensitivity in a
The capacitor shown in Fig. 1, which presents a very high value per unit
area, is used for reducing the rate effect sensitivity in a thyristor structure, as
shown in Fig. 2.
The capacitor is placed in pocket 1 isolated by P+ isolation wall 2 extending
to substrate 3. N+ subcollector region 4 stands at the interface of substrate 3
and N epitaxial layer 5 in pocket 1.
To build up the capacitor, P+ isolation region 6 and N+ emitter region 7 are
diffused into epitaxial layer 5. Contacts 8 and 9 are made with regions 6 and 7,
The capacitor between contacts 8 and 9 is composed of three main parts.
These are the capacitor of the junction between P+ isolation region and N+
subcollector region 4, the capacitor of the junction between N epitaxial layer 5
and P+ isolation region 6, and the capacitor of the junction between N+ emitter
region 7 and P+ isolation region 6.
Since these three capacitors are in parallel, the total capacitor between
contacts 8 and 9 has a value per unit area roughly equal to three picofarads per
square mil (using a typical bipolar process).
In the crosspoint structure shown in Fig, 2, comprising a thyristor with anode,
cathode and gate electrodes and register R(GK), false triggering can occur if,
during a transient voltage applied between anode and cathode, a transient
current flowing through gate - cathode resistor R(GK) is large enough to...