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When doping atoms are implanted into a semiconductor device over a large area, the implanted layers initially have a low conductivity.
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Directed Activation of Implanted Semiconductor Zones
When doping atoms are implanted into a semiconductor device over a large
area, the implanted layers initially have a low conductivity.
By the locally confined heating of a part of the implanted layer with the aid of
a laser and/or an electron beam, resistances and current paths can be
After the last heat step during the manufacture of semiconductor devices, i.e.,
generally after the metallization and sintering of the metal layer, preferably boron
or phosphorus are implanted at room temperature over the full surface of the
semiconductor device. At a suitable implantation energy the semiconductor
material is masked only by the metallization and thick passivation layers, if any.
Subsequently, by means of a focussed laser or an electron beam, single,
defined areas of the previously implanted semiconductor are locally heated to
about 400 to 600 Degrees C and thus electrically activated. The size and
electrical conductivity of these areas are a function of the location and time of the
laser or electron beam radiation, without additional processes being required.
The method can be applied in all those cases where the processed device
has to be changed, for example, for programming read-only storage structures,
for fine-adjusting resistances in digital-to-analog converters, or for connecting
and/or separating individual fusible links on highly integrated chips.