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Photoresist Mask for Sputter Etching

IP.com Disclosure Number: IPCOM000070229D
Original Publication Date: 1978-Aug-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Hu, CT [+details]

Abstract

To define a complex structure in a substrate, photolithography is used to define the pattern using a photoresist mask. The substrate with the mask is then placed into an argon atmosphere in a sputtering apparatus. The entire mask and substrate is subjected to the sputter etch process. Afterwards, the photoresist is stripped in an appropriate solvent, and the etched substrate is cleaned. The process can be repeated for different etching patterns.