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Polysilicon Gate DMOSFET with Low Resistance Diffused Interconnection Lines Disclosure Number: IPCOM000070261D
Original Publication Date: 1978-Aug-01
Included in the Prior Art Database: 2005-Feb-21

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Rideout, VL [+details]


Double-diffused metal-oxide-silicon field-effect transistors (DMOSFETs) are attractive for higher performance digital integrated circuits. Typically, polysilicon-gate DMOSFETs are made using five basic masking operations: 1. field isolation pattern (e.g., recessed oxide), 2. polysilicon-gate pattern, 3. P type short channel pattern on source side of device, 4. contact holes to source, drain, and/or gate, and 5. metallization pattern.