Browse Prior Art Database

Polysilicon Gate DMOSFET with Low Resistance Diffused Interconnection Lines

IP.com Disclosure Number: IPCOM000070261D
Original Publication Date: 1978-Aug-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Rideout, VL [+details]

Abstract

Double-diffused metal-oxide-silicon field-effect transistors (DMOSFETs) are attractive for higher performance digital integrated circuits. Typically, polysilicon-gate DMOSFETs are made using five basic masking operations: 1. field isolation pattern (e.g., recessed oxide), 2. polysilicon-gate pattern, 3. P type short channel pattern on source side of device, 4. contact holes to source, drain, and/or gate, and 5. metallization pattern.