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Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
This article describes a metal-oxide-semiconductor structure which can be employed to provide a one-dimensional channel for the passage of electrons between a source and a drain.
English (United States)
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Gate Electrode using Localization Effects
This article describes a metal-oxide-semiconductor structure which can be
employed to provide a one-dimensional channel for the passage of electrons
between a source and a drain.
Shown above are two views of an embodiment which consists of a P-type
semiconductor 10 with an oxide layer 12 grown on the surface. The oxide layer
12 forms an intermediate layer between the semiconductor 10 and a metal gate 14. The gate is narrowly constricted, forming a bridge 16 which is substantially
longer than wide.
The device can be operated as a conventional metal-oxide semi-conductor
field-effect transistor (MOSFET). When a positive voltage is applied to the gate
14, the gate will attract electrons which will form an inversion layer under the
gate. In the vicinity of the bridge 16 the electrons will be highly localized and will
create a constrained region which is narrower than the bridge and is essentially
one dimensional. If the semiconductor is biased between a source 18 and drain
20, then the electron flow beneath the bridge 16 will be restricted to a one-
Page 2 of 2
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