Browse Prior Art Database

Gate Electrode using Localization Effects

IP.com Disclosure Number: IPCOM000070262D
Original Publication Date: 1978-Aug-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Chaudhari, P Laibowitz, R Maldague, PF [+details]

Abstract

This article describes a metal-oxide-semiconductor structure which can be employed to provide a one-dimensional channel for the passage of electrons between a source and a drain.