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Gate Electrode using Localization Effects Disclosure Number: IPCOM000070262D
Original Publication Date: 1978-Aug-01
Included in the Prior Art Database: 2005-Feb-21

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Chaudhari, P Laibowitz, R Maldague, PF [+details]


This article describes a metal-oxide-semiconductor structure which can be employed to provide a one-dimensional channel for the passage of electrons between a source and a drain.