Browse Prior Art Database

FET Programmable Read Only Memory

IP.com Disclosure Number: IPCOM000070308D
Original Publication Date: 1978-Sep-01
Included in the Prior Art Database: 2005-Feb-21

Publishing Venue

IBM

Related People

Authors:
Troutman, RR [+details]

Abstract

This field-effect transistor (FET) programmable read-only memory utilizes a change in the threshold voltage of the transistor to distinguish between 0 and 1 binary digits. During the read cycle, the amount of signal detected depends upon the presence of a high or low threshold voltage.