Method for Forming Bipolar Integrated Circuits Having Surface Passivating Layers of Uniform Thickness
Original Publication Date: 1978-Sep-01
Included in the Prior Art Database: 2005-Feb-21
The present method involves the recognition that through the use of ion implantation a single insulative layer of uniform thickness may be used even over a complete bipolar integrated circuit between the first level of metallurgy and the semiconductor substrate. This makes all capacitances uniform and controllable. This approach is made possible through the use of ion implantation. It should be noted in this connection that if even one diffusion step is used, the surface insulative layer would have to be regrown, leading to thickness differences in such insulative layers, thereby affecting the uniform capacitances.