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The driver circuit shown in Fig. 1 is a Darlington push/pull driver. In conventional Darlington drivers the pull-up transistor T3 has a resistor RB to ground, as shown in Fig. 2.
English (United States)
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Schottky Clamp for Transistor Breakdown
The driver circuit shown in Fig. 1 is a Darlington push/pull driver. In
conventional Darlington drivers the pull-up transistor T3 has a resistor RB to
ground, as shown in Fig. 2.
T3 is provided with a BVCES (breakdown voltage collector to emitter, the
base shorted) condition in the order of 20 volts when RB is eliminated and
replaced by a Schottky diode S1, connected as shown in Figs. 1 and 3.
The RB technique of keeping T3 out of BVCEO (breakdown voltage collector
to emitter, the base open) has the following disadvantages: a) Higher up-level
power dissipation; b) up-going speed degradation; and c) possible reliability
The advantages of the Schottky diode technique of insuring that T3 is not in
the BVCEO condition are the following: a) RT (Fig. 3) in the order of 40 ohms; b)
reduction in power dissipation; c) up-going transient output is improved; and d)
down-going transient output is improved.
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