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Producing Integral Via and Pad Metallurgy

IP.com Disclosure Number: IPCOM000074757D
Original Publication Date: 1971-Jun-01
Included in the Prior Art Database: 2005-Feb-23
Document File: 2 page(s) / 38K

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David, AP: AUTHOR [+2]


In this method via and pad sites are produced on a module or semiconductor device by electroplating.

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Producing Integral Via and Pad Metallurgy

In this method via and pad sites are produced on a module or semiconductor device by electroplating.

In the process, a first layer 10 of thick photoresist, preferably RISTON*, is deposited on the module or device 12 provided with a metallurgy network 14 on at least the top surface. Apertures 16 are formed in the resist by conventional exposure and development. A second layer of thick photoresist 18 is deposited over layer 10 and a second set of apertures 20, concentric to and larger than apertures 16 are formed in the layer. The substrate is then placed in a suitable plating bath and metal terminals 22 are deposited in apertures 16 & 20, as shown in B. The metal terminals have a "T" shaped cross section comprising the interconnecting-element in the via hole with an integral larger portion which provides the joining pad.

As shown in C, the photoresist layers 10 and 18 are removed leaving only the desired metallurgy network. A layer 24 of glass is then deposited on substrate 12 by a suitable deposition method and the top surface lapped smooth exposing the interconnective elements.

An advantage, other than integrity of via and joining pad, is the ability of changing via diameter from a very restricted and densely wired layer to a second layer which can accommodate an interconnection pad of a larger diameter. * Trademark of E. I. du Pont de Nemours & Co.


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