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Simulator Calibration Tool Disclosure Number: IPCOM000079256D
Original Publication Date: 1973-Jun-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 41K

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Verkuil, RL: AUTHOR


This calibration tool is used on capacitance-voltage testers to calibrate individual test probes.

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Simulator Calibration Tool

This calibration tool is used on capacitance-voltage testers to calibrate individual test probes.

In semiconductor manufacture, metal-insulator-semiconductor capacitance voltage characteristics frequently must be measured. The test apparatus is relatively sensitive and must be calibrated periodically, which calibration exercise is time-consuming and tedious.

A reference standard is generally used for monitoring equipment stability and, therefore, a very stable metal-insulator-semiconductor (MIS) structure would be ideal for such a purpose. However, it is not easy to find a very stable metal- insulator-semiconductor structure and upon finding one, it is difficult to avoid degrading it by exposure to contamination and high-electric fields. With problems such as, gate metal-insulator reactions, sodium contamination, polarization and gate shorts, a standard other than MIS structure would be needed. To fill this need, the diode-resistance-capacitance (D-R-C) network can be used to simulate a very stable structure.

The circuit of Fig. 1 will yield the MIS type capacitance voltage (C-V) characteristic shown in Fig. 2. The change from N type to P type simulation is achieved by reversing network leads.

This calibration tool illustrated in elevational cross-sectional view in Fig. 3 has top and bottom copper disks 10 and 12, respectively, and an annular spacing element 14 made of a suitable insulator positioned between plates 10 and 12, preferably...