Improving Adhesion of Photoresists to Phosphorus Doped SiO(2)
Original Publication Date: 1966-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Publishing Venue
IBM
Related People
Abstract
This method improves photoresist adhesion to phosphorus-doped silicon dioxide. A substrate is coated with a deposition of phosphorus-doped SiO(2) from separate sources of these materials. The phosphorus source is then turned off and a thin layer of undoped SiO(2) is deposited on top of the phosphorus-doped material. A photoresist can then be applied to the undoped SiO(2) and the adhesion of the resist is enhanced compared to that obtainable on phosphorus-doped SiO(2). Since the undoped SiO(2) etches at a much slower rate than the phosphorus-doped material, undercutting is no more severe than if only the phosphorus-doped material were present.
Improving Adhesion of Photoresists to Phosphorus Doped SiO(2)
This method improves photoresist adhesion to phosphorus-doped silicon dioxide. A substrate is coated with a deposition of phosphorus-doped SiO(2) from separate sources of these materials. The phosphorus source is then turned off and a thin layer of undoped SiO(2) is deposited on top of the phosphorus- doped material. A photoresist can then be applied to the undoped SiO(2) and the adhesion of the resist is enhanced compared to that obtainable on phosphorus-doped SiO(2). Since the undoped SiO(2) etches at a much slower rate than the phosphorus-doped material, undercutting is no more severe than if only the phosphorus-doped material were present.
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