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Improved Ion Imaging of X-Ray Lithographic Masks

IP.com Disclosure Number: IPCOM000102789D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-17

Publishing Venue

IBM

Related People

Authors:
Levine, JP Wagner, A [+details]

Abstract

Disclosed are methods of improving the ion images of X-ray lithographic masks. Ion images taken under conventional conditions (e.g., 20 to 100 keV Gallium) reflect the grain structure of the gold absorber on the mask.