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Mosfet with Localized Channel and Punch-Through Implants to Reduce Source/Drain Junction Capacitance Disclosure Number: IPCOM000114001D
Original Publication Date: 1994-Oct-01
Included in the Prior Art Database: 2005-Mar-27
Document File: 4 page(s) / 169K

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Bindal, A [+details]


A MOSFET structure with localized channel implant is discussed. The intent behind this structure is to reduce the Source/Drain (S/D) junction capacitance to a minimum value so that the delay of the circuits containing such transistors can be improved with respect to the ones with conventional transistors.