Technique that Allows Better Control of Oxide Growth Rate after Heavy Dose Implantation
Original Publication Date: 1996-May-01
Included in the Prior Art Database: 2005-Mar-31
Brossard, P: AUTHOR [+3]
Disclosed is an attractive approach to control the respective oxide growth rate on a heavy doped region (E15 at/cm2) and a lightly doped region (E12 at/cm2).
Technique that Allows Better Control of Oxide Growth Rate
an attractive approach to control the respective
oxide growth rate on a heavy doped region (E15 at/cm2) and a lightly
doped region (E12 at/cm2).
In some devices, an oxide layer must be
grown both on a heavy
doped region (N+) and at the same time on a lightly doped region (N-
growth rate difference between the two regions can
drive to a misfunctionnality between the active devices to be
subsequently formed therein and can drop the Final Test Yield (FTY)
are generally obtained after ionic implantation.
To increase the throughput of an implanter tool, equipment
manufacturer have developped systems which can drive the heat from
the wafer (Ion beam energy) to the supporting stage. This
configuration is detrimental for some applications.
which respect the same oxide growth rate on both
regions, have a small throughput due to a low ion beam capability.
Another tools, such model as CF4 manufactured by Varian, have been
unsuccesfully evaluated in the past due to a lack of understanding of
the phenomenum driving this oxide growth rate, but this model is very
interesting because it allows higher ion beam current (up to 1mA).
tool, first improvement has been obtained after
suppressing the cooling-down of the wafer during the implantation
step. Moreover, the ion beam current has been increased for two
- to improve the thruput of the equipment
- to increase the temperature of the waf...