Browse Prior Art Database

Use of Chem-Mech Polishing to Enhance Selective CVD-W

IP.com Disclosure Number: IPCOM000122563D
Original Publication Date: 1991-Dec-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 1 page(s) / 32K

Publishing Venue

IBM

Related People

Colgan, EG: AUTHOR [+2]

Abstract

Selective chemical vapor deposition of tungsten (sel. CVD-W) is a promising technique for stud and via fill applications for microelectronic on chip wiring [1]. Two problems which exist with Sel. CVD-W can be solved by the use of chem-mech polishing [2]. The first problem is the overfilling of holes and the formation of "nail-heads" due to holes of different depths, growth uniformity problems, or process control. The second is unwanted nucleation and growth of W on the field area between holes. A brief chem-mech polish is sufficient to remove the nail-heads and unwanted W particles (see the figure).

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Use of Chem-Mech Polishing to Enhance Selective CVD-W

      Selective chemical vapor deposition of tungsten (sel.
CVD-W) is a promising technique for stud and via fill applications
for microelectronic on chip wiring [1].  Two problems which exist
with Sel. CVD-W can be solved by the use of chem-mech polishing [2].
The first problem is the overfilling of holes and the formation of
"nail-heads" due to holes of different depths, growth uniformity
problems, or process control.  The second is unwanted nucleation and
growth of W on the field area between holes.  A brief chem-mech
polish is sufficient to remove the nail-heads and unwanted W
particles (see the figure).

      References
(1)  P. H. Singer, Semiconductor International, p. 46 (March 1990).
(2)  U.S. Patent 4,944,836.