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Application of corrosion inhibitor (RP-1/EG-41) during post-CMP cleaning. Disclosure Number: IPCOM000127365D
Publication Date: 2005-Aug-25
Document File: 1 page(s) / 27K

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This invention discloses the use of an aqueous corrosion inhibitor (commercially available RP-1/EG-41 from NuGen Tech.) during post-polish cleaning to effectively inhibit metal corrosion of the metallic write poles in a thin film magnetic head wafer. Without the addition of the corrosion inhibitor, the metal would corrode and render the device not usable.

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Application of corrosion inhibitor (RP-1/EG-41) during post-CMP cleaning.

  Normal post-CMP (chemical mechanical planarization) cleaning of a magnetic head wafer removes loose slurry particles. The current cleaning process typically includes chemicals such as surfactants and detergents in water but it provides no corrosion protection of fresh metal surface generated in the CMP operation. In particular, the current high-moment write head materials include metals that corrode easily when exposed to water. A highly corrosion sensitive wafer can corrode before the completion of the necessary cleaning process.

The present invention discloses the use of a corrosion inhibitor (such as RP-1/EG-41 from NuGen Tech.) in the post-CMP cleaning process to inhibit write head corrosion. The application of RP-1 creates a film that inhibits corrosion during and after the cleaning process. This barrier of protection continues downstream to the next wafer process and is only removed during sputter-etch just before deposition of the alumina overcoat. With this invention the wafer does not corrode during cleaning and is less likely to corrode as it moves through the wafer fabrication line.

As an example of this invention RP-1 is applied directly onto the wafer as it is loaded into the wafer cleaner. This application can occur immediately after the wafer is unloaded from the CMP tool. The application of the corrosion inhibitor continues through the cleaning process but is most effective...